VT02 Radiation Detection Sensor

Varadis

VT02

Varadis

VT02

400 nm RADFET Chip

Features

  • 400 nm RADFET
  • 8L Side Braze Ceramic Package
  • Does between 1cGy (1 rad) and 1kGy (100krad)
  • Dimensions (mm): 10.3 x 7.9 x 3.05

Varadis RADFET VT02

The VT02 is hermetically sealed and slightly larger than the plastic version. The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET and this change is related to the radiation dose. The RADFET response is non-linear and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the Varadis RADFET VT02 and measuring the DC voltage (in the range of 0.5 to 8 Volts).

The VT02 is used by a number of space agencies across the globe, including ESA (European Space Agency), NASA (National Aeronautics and Space Administration) and JAXA (Japan Aerospace Exploration Agency).

Important Information:  The VT02 RADFET has a large dynamic range, from 1 cGy (1 rad) to 1 kGy (100 krad). To fully understand the capabilities and limitations of this product, please review the data sheet.