SiC Power MOSFET 20A - 1200V

CC-CN-23-0123

Total in Stock: 100 parts
TOTAL
Pricing:
1 or above $15.00
11 or above $14.00
25 or above $12.00

CC-CN-23-0123

Gen-I MOSFET with Body Diode 20A-1200V SiC MOSFET

Features

  • Higher Efficiency
  • Reduced Cooling
  • Increased Power
  • Reduced system volume
  • TO-247-3 pacakge
Maximum ratings
Characteristics* Symbol Comments Min Typical Max Units
DC blocking voltage VDSMAX TJ = 25°C to 175°C   1200   V
Gate input voltage range VGS Recommended range -5   15 V
Dynamic -5   18
Avalanche rating VAVA VGS=0V; ID=0.1mA; TJ=25°C 1200 1388   V
VGS=0V; ID=0.1mA; TJ=175°C 1200 1425  
Pulsed drain current IDpulsed  VGS = 15V; TJ =25°C   20   A
 VGS = 15V; TJ = 175°C    14  
Continuous drain current  ID   VGS = 15V; TJ = 25°C   18  
 VGS = 15V; TJ =175°C   12  
Continuous drain power P VGS = 15V; TJ = 25°C   100    W
Maximum junction temperature TJMAX Normal operation     175 °C
During processing/soldering     250
* For description only. No rights are granted. No liability us assumed for choice of products.