SiC Power MOSFET 12A - 1200V

CC-TO-B15-0322

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Total in Stock: 100 parts
TOTAL
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CC-TO-B15-0322

Gen-I MOSFET with Body Diode 12A-1200V SiC MOSFET

Features

  • Higher efficiency
  • Reduced cooling
  • Increased power density
  • Reduced system volume
  • Package is TO-247-3
Maximum ratings
Characteristics* Symbol Comments Min Typical Max Units
DC blocking voltage VDSMAX TJ = 25°C   1200   V
Gate input voltage range VGS Recommended range -5   15 V
Dynamic -5   18
Avalanche rating VAVA TJ = 25°C 1200 1500   V
Pulsed drain current IDpulsed  VGS = 15V; TJ =25°C   13   A
 VGS = 15V; TJ = 175°C   11.5  
Continuous drain current  ID   VGS = 15V; TJ = 25°C   10   A 
 VGS = 15V; TJ =175°C   8.5  
Continuous drain power P VGS = 15V; TJ = 25°C   100    W
Maximum junction temperature TJMAX Normal operation     175 °C
During processing/soldering     250
* For description only. No rights are granted. No liability us assumed for choice of products. 

CoolCAD’s pioneering research into the wide bandgap semiconductor material SiC has led to the development of a variety of novel and state-of-the-art products. These include high power SiC MOSFETs and Diodes for next generation power electronics. These devices are especially applicable to hybrid and electric vehicles, charging stations, as well as solar energy systems. We also design, develop and manufacture optical sensors that operate in the deep UV range. These deep UV avalanche photodiodes and arrays have revolutionized flame detection and biohazard elimination, including viruses and harmful bacteria. Our high temperature CMOS electronics is enabling the construction of analog and digital integrated circuits, and even microprocessors, that can operate at temperatures higher than 400oC and even 500oC, way beyond the capabilities of ordinary electronics.