Silicon Carbide FETs available in stock

CoolCAD Electronics has announced the release of its 20A, 1200 Volt Silicon Carbide MOSFET product offering. CoolCAD Power MOSFETs exceed power, efficiency and portability capabilities of standard silicon devices and are available in a variety of breakdown voltages (650V, 1200V, 1700V & 3300V) and current ratings. They have low on-resistance and low leakage in the blocking state. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication process includes carefully chosen annealing procedures to ensure high-quality SiC-SiO2 gate oxide dielectric layer. The doping profile, neck region and edge termination ensure extremely low Ron and high breakdown voltage. More>