NUV-MT Silicon Photomultiplier
AFBR-S4N66P014M
| Pricing: | |
|---|---|
| 250 or above | $52.34 |
Features
- High PDE (63% at 420 nm)
- 4-side tileable, with high fill factors
- Cell pitch 40 µm
- High transparent epoxy protection layer
- Operating temp. range from -20°C to +60°C
The Broadcom® AFBR-S4N66P014M is single-channel silicon photomultiplier (SiPM) that is used for ultra-sensitive precision measurements of single photons. This SiPM is based on the NUV-MT technology, which combines improved photo-detection efficiency (PDE) with a
decreased dark count rate and reduced crosstalk compared to the NUV-HD technology. The SPAD pitch is 40 μm.
Larger areas can be covered by tiling multiple AFBRS4N66P014M SiPMs. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mold compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near-UV region of the light spectrum. The SiPM is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr3). This product is lead-free and compliant with RoHS.
Leadtime for shipment from factory is 2-3 weeks ARO.
