ABFR-S4N33P012M

Broadcom

AFBR-S4N33P012M

Pre-Order: 400 parts
$80.00
Pricing:
1 or above $80.00
6 or above $75.00
11 or above $70.00
26 or above $65.00
51 or above $60.00
Datasheet
Datasheet

Broadcom

AFBR-S4N33P012M

The Broadcom® AFBR-S4N33P012M is a monolithic Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons

Features

  • High PDE (40% at 420 nm)
  • High dynamic range (27339 SPADs)
  • Low noise
  • 4-side tileable, with high fil factors
  • Cell pitch 18 um
Type
Description Select All
Category
SiPMs
Manufacturer
Broadcom
Wavelength
250 - 900 nm
PDE
40% at 420 nm
Active Channel Area
1.5 mm X 1.5 mm
SPAD Pitch
18
Channels
4
Dimensions (mm)
3.54 mm X 3.77 mm

The Broadcom® AFBR-S4N33P012M is a monolithic Silicon Photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons. This SiPM is based on the NUV-MT technology which combines high photodetection efficiency (PDE) with low dark count rate and low cross-talk. With an SPAD pitch of 18 m and a short recharge time, the HDR (high dynamic range) NUV-MT SiPM provides a high dynamic range.
The active area of 3 x 3 mm2 is sub-segmented into a 2 x 2 matrix of four independent channels. Each sub-channel has an active area of 1.5 x 1.5 mm2.
Larger areas can be covered by tiling multiple AFBR-S4N33P012M SiPMs.
The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mold compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards the blue and near-UV region of the light spectrum.